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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Abdi-Jalebi, Mojtaba
University College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Doping Up the Light: A Review of A/B-Site Doping in Metal Halide Perovskite Nanocrystals for Next-Generation LEDs.
- 2023Recent development in metal halide perovskites synthesis to improve their charge-carrier mobility and photocatalytic efficiencycitations
- 2023Champion Device Architectures for Low-Cost and Stable Single-Junction Perovskite Solar Cells.
- 2023Champion Device Architectures for Low-Cost and Stable Single-Junction Perovskite Solar Cells
- 2023The race between complicated multiple cation/anion compositions and stabilization of FAPbI3 for halide perovskite solar cells
- 2021Beyond 17% stable perovskite solar module via polaron arrangement of tuned polymeric hole transport layercitations
- 2021Highly absorbing lead-free semiconductor Cu2AgBiI6 for photovoltaic applications from the quaternary CuI-AgI-BiI3 phase spacecitations
- 2020Performance-limiting nanoscale trap clusters at grain junctions in halide perovskites.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020Photodoping through local charge carrier accumulation in alloyed hybrid perovskites for highly efficient luminescencecitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2019Charge extraction via graded doping of hole transport layers gives highly luminescent and stable metal halide perovskite devices.
- 2019Lattice Strain Causes Non-Radiative Losses in Halide Perovskitescitations
- 2019Reversible Removal of Intermixed Shallow States by Light Soaking in Multication Mixed Halide Perovskite Films.
- 2019Back-Contact Perovskite Solar Cells
- 2018Maximizing and stabilizing luminescence from halide perovskites with potassium passivationcitations
- 2018Maximizing and stabilizing luminescence from halide perovskites with potassium passivationcitations
- 2018Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites
- 2018Potassium- and Rubidium-Passivated Alloyed Perovskite Films: Optoelectronic Properties and Moisture Stability.
- 2018Dedoping of Lead Halide Perovskites Incorporating Monovalent Cations.
- 2018Probing buried recombination pathways in perovskite structures using 3D photoluminescence tomography.
- 2018In situ simultaneous photovoltaic and structural evolution of perovskite solar cells during film formationcitations
- 2017Vapour-Deposited Cesium Lead Iodide Perovskites: Microsecond Charge Carrier Lifetimes and Enhanced Photovoltaic Performancecitations
- 2017Vapour-Deposited Cesium Lead Iodide Perovskitescitations
- 2017Impact of microstructure on the electron-hole interaction in lead halide perovskitescitations
- 2017Vapour-Deposited Cesium Lead Iodide Perovskites: Microsecond Charge Carrier Lifetimes and Enhanced Photovoltaic Performance.
- 2016Photon recycling in lead iodide perovskite solar cells.
- 2015Influence of an Inorganic Interlayer on Exciton Separation in Hybrid Solar Cells.
Places of action
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article
A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
Abstract
Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.