| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Di Nuzzo, Daniele
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2020Circularly Polarized Photoluminescence from Chiral Perovskite Thin Films at Room Temperaturecitations
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devicescitations
- 2017Ultrafast Charge and Triplet State Formation in Diketopyrrolo-pyrrole Low Band gap Polymer/Fullerene Blends: Influence of Nanoscale Morphology of Organic Photovoltaic Materials on Charge Recombination to the Triplet State
- 2017Ultrafast charge and triplet state formation in Diketopyrrolopyrrole Low Band Gap Polymer/Fullerene blendscitations
- 2016 Improved performance of perovskite light-emitting diodes using a PEDOT:PSS and MoO3 composite layer
- 2010Efficient solar cells based on an easily accessible diketopyrrolopyrrole polymercitations
- 2010Improved Film Morphology Reduces Charge Carrier Recombination into the Triplet Excited State in a Small Bandgap Polymer‐Fullerene Photovoltaic Cellcitations
Places of action
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article
A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
Abstract
Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.