Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2018Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.citations
  • 2018Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.citations

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Chart of shared publication
Duffy, Liam B.
2 / 3 shared
Kamboj, Varun S.
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Senanayak, Satyaprasad P.
1 / 11 shared
Barnes, Crispin Hw
1 / 5 shared
Beere, Harvey E.
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Singh, Angadjit
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Liu, Jieyi
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Llandro, Justin
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Hesjedal, Thorsten
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Ritchie, David A.
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Ritchie, David
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Beere, Harvey
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Senanayak, Satyaprasad Premswarup
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Barnes, Crispin H. W.
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2018

Co-Authors (by relevance)

  • Duffy, Liam B.
  • Kamboj, Varun S.
  • Senanayak, Satyaprasad P.
  • Barnes, Crispin Hw
  • Beere, Harvey E.
  • Singh, Angadjit
  • Liu, Jieyi
  • Llandro, Justin
  • Hesjedal, Thorsten
  • Ritchie, David A.
  • Ritchie, David
  • Beere, Harvey
  • Senanayak, Satyaprasad Premswarup
  • Barnes, Crispin H. W.
OrganizationsLocationPeople

article

Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.

  • Duffy, Liam B.
  • Kamboj, Varun S.
  • Ritchie, David
  • Singh, Angadjit
  • Beere, Harvey
  • Liu, Jieyi
  • Senanayak, Satyaprasad Premswarup
  • Ionescu, Adrian
  • Barnes, Crispin H. W.
  • Hesjedal, Thorsten
Abstract

Ferromagnetic ordering in a topological insulator can break time-reversal symmetry, realizing dissipationless electronic states in the absence of a magnetic field. The control of the magnetic state is of great importance for future device applications. We provide a detailed systematic study of the magnetic state in highly doped CrxSb2-xTe3 thin films using electrical transport, magneto-optic Kerr effect measurements and terahertz time domain spectroscopy, and also report an efficient electric gating of ferromagnetic order using the electrolyte ionic liquid [DEME][TFSI]. Upon increasing the Cr concentration from x = 0.15 to 0.76, the Curie temperature (Tc) was observed to increase by ~5 times to 176 K. In addition, it was possible to modify the magnetic moment by up to 50% with a gate bias variation of just ± 3V, which corresponds to an increase in carrier density by 50%. Further analysis on a sample with x = 0.76 exhibits a clear insulator-metal transition at Tc, indicating the consistency between the electrical and optical measurements. The direct correlation obtained between the carrier density and ferromagnetism - in both electrostatic and chemical doping - using optical and electrical means strongly suggests a carrier-mediated Ruderman-Kittel-Kasuya-Yoshida (RKKY) coupling scenario. Our low-voltage means of manipulating ferromagnetism, and consistency in optical and electrical measurements provides a way to realize exotic quantum states for spintronic and low energy magneto-electronic device applications.

Topics
  • density
  • impedance spectroscopy
  • thin film
  • Curie temperature