| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Oliver, Rachel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2024Room temperature quantum emitters in aluminum nitride epilayers on silicon
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Thick, adherent diamond films on AlN with low thermal barrier resistancecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
Places of action
| Organizations | Location | People |
|---|
article
Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C
Abstract
The digital image correlation (DIC) of speckle patterns obtained by vapour-assisted gold remodelling at 200 – 350 °C has already been used to map plastic strains with submicron resolution. However, it has not so far proved possible to use such patterns for testing at high temperatures. Here we demonstrate how a gold speckle pattern can be made that is stable at 700 °C, to study deformation in a commercial TiAl alloy (Ti-45Al-2Nb- 2Mn(at%)-0.8 vol% TiB$_2$). The pattern is made up of a uniformly sized random array of Au islands as small as 15 nm in diameter, depending on reconstruction parameters, with a sufficiently small spacing to be suitable for nano-scale, nDIC, strain mapping at a subset size of 60 × 60 nm$^2$ . It can be used at temperatures up to 700 °C for many hours, for high cycle fatigue testing for instance. There is good particle attachment to the substrate. It can withstand ultra-sound cleaning, is thermally stable and has a high atomic number contrast for topography-free backscatter electron imaging.