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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Deike, Rüdiger
University of Duisburg-Essen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Die Substitution von Magnesium zur Entschwefelung von Gusseisen: Ein Weg globale Abhängigkeiten in der Eisengussindustrie zu verringern
- 2022Was macht Magnesium bei der Magnesiumbehandlung?
- 2022Investigation of silicon carbide dissolution behavior in molten cast iron under specific consideration of the formation of reaction layers
- 2021Automatisierte Einblasanlage zur kalkbasierten Entschwefelung und Legierungseinstellung von Gusseisen (EKALGU)
- 2018The effect of feedstock origin and temperature on the structure and reactivity of char from pyrolysis at 1300 2800 °C
Places of action
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article
Investigation of silicon carbide dissolution behavior in molten cast iron under specific consideration of the formation of reaction layers
Abstract
Silicon carbide (SiC) is one of the most commonly used substances in cast iron foundries to adjust the carbon and silicon content and in addition to inoculate cast iron melts in order to generate proper graphite structures. Nonetheless, the dissolution behavior of SiC has not yet been clearly defined to explain the effects of this substance in cast iron industries comprehensively. In this set of experiments, the dissolution of SiC in molten cast iron has been studied in detail by introducing SiC particles into molten cast iron under defined conditions. According to the experimental results the dissolution of SiC takes place in several stages that consequently result in different reaction layers around the SiC particles.