| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mazumder, Baishakhi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2021Probing structural and chemical evolution in (AlxGa1−x)2O3 using atom probe tomography: A reviewcitations
- 2010Solvothermal synthesis of group 5 and 6 nitrides via reactions using LiNH2 and ammonia nitrogen sourcescitations
- 2009Solution phase preparative routes to nitride morphologies of interest in catalysiscitations
Places of action
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article
Probing structural and chemical evolution in (AlxGa1−x)2O3 using atom probe tomography: A review
Abstract
<jats:title>Abstract</jats:title><jats:p>(Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is a novel ultra‐wide bandgap semiconductor with the potential to dominate future power electronics industries. High‐performance devices demand high Al content in (Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> but are limited by crystallinity degradation resulting from phase separation. Additionally, the solubility limit of Al is still under debate, and conclusive research is in progress. (Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is also limited in high‐frequency applications owing to low carrier mobility and requires n‐type doping. For commercializing this material, the major obstacle is understanding dopant's behavior in the host (Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. To investigate these issues, an advanced characterization technique, atom probe tomography (APT), was employed to analyze the structural‐chemical evolution of (Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. In this review, we summarized our recent works on the structure‐chemistry investigation of (Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> with alloy composition and doping interaction. We introduced machine learning algorithms on APT data to reveal unrivaled knowledge, previously not achievable with conventional methodologies. The outstanding capabilities of APT to study (Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> with Al composition and doping will be considered significant for the wide bandgap semiconductors community.</jats:p>