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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Maroudas, Dimitrios
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Publications (5/5 displayed)
- 2005The role of SiH3 diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films
- 2005Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin filmscitations
- 2005Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfacescitations
- 2004Surface Processes during Growth of Hydrogenated Amorphous Siliconcitations
- 2002Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfacescitations
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article
The role of SiH3 diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films
Abstract
<p>Device-quality hydrogenated amorphous silicon (a-Si:H) thin films grown under conditions where the SiH<sub>3</sub> radical is the dominant deposition precursor are remarkably smooth, as the SiH<sub>3</sub> radical is very mobile and fills surface valleys during its diffusion on the a-Si:H surface. In this paper, we analyze atomic-scale mechanisms of SiH<sub>3</sub> diffusion on a-Si: H surfaces based on molecular-dynamics simulations of SiH<sub>3</sub> radical impingement on surfaces of a-Si:H films. The computed average activation barrier for radical diffusion on a-Si:H is 0.16 eV. This low barrier is due to the weak adsorption of the radical onto the a-Si:H surface and its migration predominantly through overcoordination defects; this is consistent with our density functional theory calculations on crystalline Si surfaces. The diffusing SiH<sub>3</sub> radical incorporates preferentially into valleys on the a-Si:H surface when it transfers an H atom and forms a Si-Si backbond, even in the absence of dangling bonds.</p>