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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Maqbool, Muhammad
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 20243D Melt-Extrusion Printing of Medium Chain Length Polyhydroxyalkanoates and Their Application as Antibiotic-Free Antibacterial Scaffolds for Bone Regenerationcitations
- 2022Recent advancements and future insight of lead-free non-toxic perovskite solar cells for sustainable and clean energy production: A reviewcitations
- 2021Synthesis and Fabrication of Co1−xNixCr2O4 Chromate Nanoparticles and the Effect of Ni Concentration on Their Bandgap, Structure, and Optical Propertiescitations
- 2021Synthesis, characterization, antibacterial properties, and in vitro studies of selenium and strontium co-substituted hydroxyapatitecitations
- 2021Antibacterial Composite Materials Based on the Combination of Polyhydroxyalkanoates With Selenium and Strontium Co-substituted Hydroxyapatite for Bone Regenerationcitations
- 2019Chitosan/hydroxyapatite composite bone tissue engineering scaffolds with dual and decoupled therapeutic ion delivery: copper and strontiumcitations
- 2018Electrophoretic deposition of lawsone loaded bioactive glass (BG)/chitosan composite on polyetheretherketone (PEEK)/BG layers as antibacterial and bioactive coatingcitations
- 2013Fabrication of cobalt-nickel binary nanowires in a highly ordered alumina template via AC electrodeposition
- 2009Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films
- 2006ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATIONcitations
- 2005SURFACE CHARACTERIZATION AND GRAIN SIZE CALCULATION OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATIONcitations
- 2004Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.citations
- 2003Luminescent Holmium Doped Amorphous AlN Thin Films for use as Waveguides and Laser Cavities.citations
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article
Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>Praseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>H<jats:sub>4</jats:sub>, <jats:sup>3</jats:sup>P<jats:sub>1</jats:sub>→ <jats:sup>3</jats:sup>H<jats:sub>5</jats:sub>, and <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>F<jats:sub>2</jats:sub> transitions in AlN:Pr, <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>H<jats:sub>4</jats:sub>, <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>H<jats:sub>6</jats:sub>, and <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>F<jats:sub>2</jats:sub> transitions in GaN:Pr and from <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>H<jats:sub>4</jats:sub>, <jats:sup>3</jats:sup>P<jats:sub>1</jats:sub>→ <jats:sup>3</jats:sup>H<jats:sub>5</jats:sub>, <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>H<jats:sub>6</jats:sub>, and <jats:sup>3</jats:sup>P<jats:sub>0</jats:sub> → <jats:sup>3</jats:sup>F<jats:sub>2</jats:sub> transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from <jats:sup>1</jats:sup>S<jats:sub>0</jats:sub> → <jats:sup>1</jats:sup>D<jats:sub>2</jats:sub> and <jats:sup>1</jats:sup>S<jats:sub>0</jats:sub> → <jats:sup>1</jats:sup>I<jats:sub>6</jats:sub> which are not observed in GaN:Pr and BN:Pr films.</jats:p>