| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Aydil, Eray S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Chemically Induced Magnetic Dead Shells in Superparamagnetic Ni Nanoparticles Deduced from Polarized Small-Angle Neutron Scatteringcitations
- 2020Plasmonic nanocomposites of zinc oxide and titanium nitridecitations
- 2020Formation of Stable Metal Halide Perovskite/Perovskite Heterojunctionscitations
- 2020Thermal transport in ZnO nanocrystal networks synthesized by nonthermal plasmacitations
- 2019Carrier-gas assisted vapor deposition for highly tunable morphology of halide perovskite thin filmscitations
- 2018Computational Study of Structural and Electronic Properties of Lead-Free CsMI3 Perovskites (M = Ge, Sn, Pb, Mg, Ca, Sr, and Ba)citations
- 2014Substrate and temperature dependence of the formation of the Earth abundant solar absorber Cu2ZnSnS4 by ex situ sulfidation of cosputtered Cu-Zn-Sn filmscitations
- 2004Surface Processes during Growth of Hydrogenated Amorphous Siliconcitations
- 2002Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Sicitations
Places of action
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article
Surface Processes during Growth of Hydrogenated Amorphous Silicon
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>Hydrogenated amorphous silicon films for photovoltaics and thin film transistors are deposited from silane containing discharges. The radicals generated in the plasma such as SiH<jats:sub>3</jats:sub> and H impinge on the surface and lead to silicon film growth through a complex network of elementary surface processes that include adsorption, abstraction, insertion and diffusion of various radicals. Mechanism and kinetics of these reactions determine the film composition and quality. Developing deposition strategies for improving the film quality requires a fundamental understanding of the radical-surface interaction mechanisms. We have been using in situ multiple total internal reflection Fourier transform infrared spectroscopy and in situ spectroscopic ellipsometry in conjunction with atomistic simulations to determine the elementary surface reaction and diffusion mechanisms. Synergistic use of experiments and atomistic simulations elucidate elementary processes occurring on the surface. Herein, we review our current understanding of the reaction mechanisms that lead to a-Si:H film growth with special emphasis on the reactions of the SiH<jats:sub>3</jats:sub> radical.</jats:p>