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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Suvorova, N. A.
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Publications (4/4 displayed)
- 2008Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealingcitations
- 2005ZrO2 film interfaces with Si and SiO2citations
- 2003Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2002Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
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article
Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
Abstract
<p>(Ba,Sr)TiO<sub>3</sub> (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si, Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO<sub>2</sub> layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO<sub>2</sub> films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO<sub>2</sub>. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density D<sub>it</sub> of an order of magnitude was observed for oxidized Si substrates.</p>