| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Manasreh, M. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Theoretical Investigations of the Structural, Dynamical, Electronic, Magnetic, and Thermoelectric Properties of CoMRhSi (M = Cr, Mn) Quaternary Heusler Alloyscitations
- 2014Uncooled photodetectors based on CdSe nanocrystals with an interdigital metallizationcitations
- 2013Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaic application
- 2004Intersubband Transitions in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Multi Quantum Wellscitations
- 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scatteringcitations
- 2003Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dotscitations
- 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wellscitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wells
- 2001Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Films
- 2001Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN
- 2000Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films
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article
Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Films
Abstract
<jats:title>Abstract</jats:title><jats:p>Optical absorption measurements were used to investigate deep defects in proton irradiated doped and undoped AlGaN thin films grown on sapphire substrates. Several samples were proton irradiated with energies ranging between 10 keV and 1 MeV. In certain samples, multiple-energy ion implantation was found necessary to produce a defect, which is responsible for the absorption band observed at 4.61 eV with a shoulder at around 4.10 eV in Al<jats:sub>0.6</jats:sub>Ga<jats:sub>0.4</jats:sub>N. Furnace thermal annealing of the irradiated samples show that this absorption band starts to anneal out at temperature as low as 200 oC. A combined isochronal and isothermal annealing in the temperature range of 200- 350°C shows that the activation energy (enthalpy associated with the migration process) of this defect is approximately 0.41 eV. This leads us to conclude that this absorption band is due to a N-vacancy related defect. It is observed that the peak position energy of the absorption band due to this defect is shifted depending on the Al mole fraction in good agreement with the theoretical predictions.</jats:p>