| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Manasreh, M. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Theoretical Investigations of the Structural, Dynamical, Electronic, Magnetic, and Thermoelectric Properties of CoMRhSi (M = Cr, Mn) Quaternary Heusler Alloyscitations
- 2014Uncooled photodetectors based on CdSe nanocrystals with an interdigital metallizationcitations
- 2013Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaic application
- 2004Intersubband Transitions in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Multi Quantum Wellscitations
- 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scatteringcitations
- 2003Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dotscitations
- 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wellscitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wells
- 2001Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Films
- 2001Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN
- 2000Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films
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article
Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN
Abstract
<jats:title>Abstract</jats:title><jats:p>Thermal annealing effects on carbon-hydrogen (C-H) complexes defects in AlGaN grown on sapphire by metalorganic chemical vapor deposition (MOCVD) technique have been investigated using Fourier transform infrared spectroscopy (FTIR). The CH complexes in AlGaN, formed either during growth or by proton irradiation, exhibit five local vibrational modes (LVMs) due to the symmetric and asymmetric vibrational stretching modes of C-H in CH<jats:sub>n</jats:sub> (n=1–;3) defect complexes. It was found that the annealing temperature (T<jats:sub>a</jats:sub>) of 500°C is sufficient enough to dissociate most of the C-H complexes in AlGaN samples. A turning point annealing temperature is found around 300°C for un-irradiated Mg-doped sample, below which the total integrated area of the C-H LVMs continued to increase with increasing annealing temperature and reach the maximum value around 300°C. At T<jats:sub>a</jats:sub> > 300°C, the total integrated area of the C-H LVMs starts to decrease and the C-H complexes seem to be completely depleted at T<jats:sub>a</jats:sub> > 600°C. The depleted C-H LVMs were observed to partially recover after thermal annealing at T<jats:sub>a</jats:sub> > 500°C and waiting for aging periods of several days. This recovery behavior is explained in terms of the hydrogen being remained inside the crystal after the dissociation of C-H complexes, subsequent diffusion and recombining again with carbon atom to reform C-H complexes.</jats:p>