| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Szot, Kristof
University of Silesia
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Heterogeneity in La distribution in highly La-doped SrTiO$_{3}$ crystalscitations
- 2021Is Reduced Strontium Titanate a Semiconductor or a Metal?citations
- 2021Is Reduced Strontium Titanate a Semiconductor or a Metal?
- 2020Unconventional Co-Existence of Insulating Nano-Regions and Conducting Filaments in Reduced SrTiO3: Mode Softening, Local Piezoelectricity, and Metallicitycitations
- 2020Localized electrochemical redox reactions in yttria-stabilized zirconia single crystalscitations
- 2019Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidationcitations
- 2014Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO 3 by confocal Raman microscopycitations
- 2014Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO3by confocal Raman microscopycitations
- 2002Nucleation and growth of thin (Ba,Sr)TiO3 films in a MOCVD reactorcitations
- 2001Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substratescitations
Places of action
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article
Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates
Abstract
<jats:title>Abstract</jats:title><jats:p>We have prepared single crystalline epitaxial PbZr<jats:sub>0.52</jats:sub>Ti<jats:sub>0.48</jats:sub>O<jats:sub>3</jats:sub> (PZT) and BaTiO<jats:sub>3</jats:sub> (BTO) thin films on single crystalline epitaxial SrRuO<jats:sub>3</jats:sub> (SRO) thin films grown on SrTiO<jats:sub>3</jats:sub> (100) (STO) substrates. PZT and SRO thin films were grown using high-pressure on-axis sputtering and BTO using pulsed laser deposition (PLD). The film thickness ranged between 12 to 165 nm. Their excellent structural properties, surface smoothness and interface sharpness were demonstrated by X-Ray Diffraction measurements (XRD), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Rutherford Backscattering Spectrometry and Channeling measurements (RBS/C) were used to analyze stoichiometry and crystalline quality. Ferroelectric hysteresis loops were obtained for all films of a thickness down to 12 nm showing a decrease in the remanent polarization Pr and an increase in the coercive field Ec towards thinner film thicknesses. Furthermore we have prepared tunneling junctions with a PZT or BTO barrier thickness of 3-6 nm. Reproducible bi-stable I-V-curves and bias dependence of the conductance were obtained suggesting an influence of the ferroelectric properties of the barrier material on the tunnel current.</jats:p>