Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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693.932 PEOPLE
693.932 People People

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Naji, M.
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (11/11 displayed)

  • 2013P-type and undoped InGaN across the entire alloy composition rangecitations
  • 2013P-type InGaN across the entire alloy composition range13citations
  • 2012Embedded binary eutectic alloy nanostructures4citations
  • 2009Properties of native point defects in In1-xAlxN alloys3citations
  • 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications6citations
  • 2008Band gap bowing parameter of In1-x Alx N70citations
  • 2008High efficiency InAlN-based solar cells5citations
  • 2008Low-temperature grown compositionally graded InGaN films19citations
  • 2002Band anticrossing in highly mismatched group II-VI semiconductor alloyscitations
  • 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloys12citations
  • 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation2citations

Places of action

Chart of shared publication
Alarcon-Llado, E.
2 / 4 shared
Mayer, M. A.
2 / 5 shared
Walukiewicz, W.
10 / 87 shared
Wang, Ke
1 / 18 shared
Nanishi, Y.
2 / 9 shared
Araki, T.
2 / 8 shared
Katsuki, T.
2 / 3 shared
Wang, K.
1 / 27 shared
Stone, P. R.
1 / 9 shared
Boswell-Koller, C. N.
1 / 2 shared
Chrzan, D. C.
1 / 6 shared
Sherburne, M. P.
1 / 2 shared
Dubon, O. D.
1 / 40 shared
Liao, C. Y.
1 / 6 shared
Haller, E. E.
8 / 30 shared
Minor, A. M.
1 / 10 shared
Watanabe, M.
1 / 5 shared
Guzman, J.
1 / 2 shared
Lieten, R. R.
1 / 1 shared
Yuan, C. W.
1 / 2 shared
Conry, T.
1 / 2 shared
Beeman, J. W.
3 / 21 shared
Bustillo, K. C.
1 / 3 shared
Shin, S. J.
1 / 2 shared
Sawyer, C. A.
1 / 3 shared
Lu, H.
1 / 15 shared
Jones, R. E.
4 / 8 shared
Li, S. X.
1 / 5 shared
Schaff, W. J.
4 / 10 shared
Matthews, K. D.
1 / 1 shared
Chen, X.
3 / 33 shared
Eastman, L. F.
1 / 1 shared
Hao, D.
1 / 1 shared
Broesler, R.
2 / 8 shared
Williamson, T. L.
1 / 1 shared
Hoffbauer, M. A.
1 / 1 shared
Liliental-Weber, Z.
1 / 25 shared
Miller, N.
1 / 3 shared
Wu, J.
3 / 56 shared
Ramdas, A.
1 / 1 shared
Miotkowski, I.
2 / 2 shared
Shan, W.
2 / 16 shared
Ramdas, A. K.
1 / 1 shared
Miotkowska, S.
1 / 1 shared
Ridgway, M. C.
1 / 38 shared
Chart of publication period
2013
2012
2009
2008
2002
2000

Co-Authors (by relevance)

  • Alarcon-Llado, E.
  • Mayer, M. A.
  • Walukiewicz, W.
  • Wang, Ke
  • Nanishi, Y.
  • Araki, T.
  • Katsuki, T.
  • Wang, K.
  • Stone, P. R.
  • Boswell-Koller, C. N.
  • Chrzan, D. C.
  • Sherburne, M. P.
  • Dubon, O. D.
  • Liao, C. Y.
  • Haller, E. E.
  • Minor, A. M.
  • Watanabe, M.
  • Guzman, J.
  • Lieten, R. R.
  • Yuan, C. W.
  • Conry, T.
  • Beeman, J. W.
  • Bustillo, K. C.
  • Shin, S. J.
  • Sawyer, C. A.
  • Lu, H.
  • Jones, R. E.
  • Li, S. X.
  • Schaff, W. J.
  • Matthews, K. D.
  • Chen, X.
  • Eastman, L. F.
  • Hao, D.
  • Broesler, R.
  • Williamson, T. L.
  • Hoffbauer, M. A.
  • Liliental-Weber, Z.
  • Miller, N.
  • Wu, J.
  • Ramdas, A.
  • Miotkowski, I.
  • Shan, W.
  • Ramdas, A. K.
  • Miotkowska, S.
  • Ridgway, M. C.
OrganizationsLocationPeople

document

Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

  • Walukiewicz, W.
  • Ridgway, M. C.
  • Beeman, J. W.
  • Wu, J.
  • Shan, W.
  • Haller, E. E.
  • Ager, J. W.
Abstract

Dilute III-N<sub><i>x</i></sub>-V<sub><i>1-x</i></sub> alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N<sub><i>x</i></sub>-V<i><sub>1-x</sub> </i>alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN<sub><i>x</i></sub>As<i><sub>1-x</sub> </i>and InN<sub><i>x</i></sub>P<sub><i>1-x</i></sub> thin films. The fraction of N occupying anion sites ("active" N) in the GaN<sub style="font-style: italic;">x</sub>As<i><sub>1-x</sub> </i>layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN<sub><i>x</i></sub>P<sub><i>1-x</i></sub> alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (&lt;20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

Topics
  • thin film
  • Nitrogen
  • annealing
  • activation