| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reynolds, Steve
University of Dundee
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2019A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors
- 2017Photoconductivity in Materials Researchcitations
- 2014Electronic properties of undoped microcrystalline silicon oxide filmscitations
- 2012Properties of thin-film silicon solar cells at very high irradiancecitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2010Excimer laser wet oxidation of hydrogenated amorphous siliconcitations
- 2010Measurement and modelling of transport in amorphous semiconductorscitations
- 2009Carrier mobility and density of states in microcrystalline silicon film compositions, probed using time-of-flight photocurrent spectroscopy
- 2005Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors
- 2004Decay from steady-state photocurrent in amorphous semiconductorscitations
- 2003Analysis and modelling of generation-recombination noise in amorphous semiconductorscitations
- 2002Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopycitations
- 2002Transient decay from the steady-state in microcrystalline silicon
- 2001Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filamentscitations
- 2001Generation-recombination noise in amorphous semiconductorscitations
- 2000Improved high resolution post-transit spectroscopy for determining the density of states in amorphous semiconductors
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article
Improved high resolution post-transit spectroscopy for determining the density of states in amorphous semiconductors
Abstract
We show that the analysis of post-transit photocurrent i(t) in a multi-trapping context to determine the density of trapping states g(E) is capable of resolving features less than kT in width. A commonly used method uses a Laplace inversion of i(t) data giving the well-known result g(E) ∼ t i(t) but employs a delta function approximation for trap release times, which results in loss of energy resolution. We show that it is possible to retain the exponential distribution function for trap release time and solve the multi-trapping rate equations directly, giving significantly improved resolution. The analysis is performed on computer generated posttransit data for distributed and discrete traps, and compared with the earlier method and other related Fourier transform methods for determining g(E). In addition, the versatility of the new method in handling cases with either distributed traps or with discrete traps means that it can be applied to disordered materials or to crystalline materials with well-defined defect levels.