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Kumbhare, Pankaj
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article
Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>We have demonstrated that pulsed laser deposition (PLD) conditions, i.e. O<jats:sub>2</jats:sub> partial pressure (p<jats:sub>O2</jats:sub>) and temperature (T), enable control over the polarity of resistance switching in PCMO (Pr<jats:sub>0.7</jats:sub>C<jats:sub>0.3</jats:sub>MnO<jats:sub>3</jats:sub>) i.e. unipolar resistive switching (URS) vs. bipolar resistive switching (BRS). We observe by detailed physical characterization that BRS occurs in poly-crystalline thin films while URS is seen in amorphous films – indicating the materials origin of URS vis-a-vis BRS. BRS shows attractive lower voltage operation, no forming and lower variability than URS.</jats:p>