| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pastor Pastor, David
Universidad Complutense de Madrid
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2023Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
- 2023Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
- 2022Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2022On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodescitations
- 2015Meyer Neldel rule application to silicon supersaturated with transition metalscitations
- 2014Room-temperature operation of a titanium supersaturated silicon-based infrared photodetectorcitations
- 2013Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
- 2013Electrical decoupling effect on intermediate band Ti-implanted silicon layerscitations
- 2013Study of the electrical behavior in Intermediate Band-Si junctions
- 2012Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantationcitations
- 2012Interstitial Ti for intermediate band formation in Ti-supersaturated siliconcitations
- 2002Effect of long chain branching on linear-viscoelastic melt properties of polyolefinscitations
Places of action
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article
Study of the electrical behavior in Intermediate Band-Si junctions
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1µA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.</jats:p>