| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Massi, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2021Colourless luminescent solar concentrators based on Iridium(III)-Phosphorscitations
- 2021A multi-technique tomography-based approach for non-invasive characterization of additive manufacturing components in view of vacuum/UHV applications: preliminary resultscitations
- 2019Synthesis, reactivity and preliminary biological activity of iron(0) complexes with cyclopentadienone and amino-appended N-heterocyclic carbene ligandscitations
- 2016Structural characterisation and photophysical properties of lanthanoid complexes of a tetra-amide functionalised calix[4]arenecitations
- 2014Scratch testing for micro- and nanoscale evaluation of tribocharging in DLC films containing silver nanoparticles using AFM and KPFM techniquescitations
- 2014Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cellscitations
- 2012Argon incorporation on silicon carbide thin films deposited by bias co-sputtering techniquecitations
- 2012Automation of a Mass Flow Controller for Application in Time‐Multiplex SF<sub>6</sub>+CH<sub>4</sub> Plasma Etching of Siliconcitations
Places of action
| Organizations | Location | People |
|---|
article
Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>The influence of negative substrate bias on the chemical, electrical and mechanical properties of silicon carbide (SiC) thin films deposited onto (100) silicon substrate by dc magnetron cosputtering without external substrate heating is reported. These studies were performed by using the following techniques: Rutherford backscattering spectroscopy (RBS), profilometry, Raman spectroscopy, four-point probe method and nanoindentation. The results indicate that there is a good correlation between the substrate bias voltage and the argon incorporation into SiC film, namely, the SiC films deposited under substrate bias of –200 V and –300 V have higher argon content and higher elastic modulus and hardness than those deposited at 0 V. An opposite behavior was found for electrical resistivity: the SiC deposited at –300 V has resistivity of 0.45 Ω.cm whereas the deposited at 0 V has 7.0 Ω.cm.</jats:p>