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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Caruso, Anthony
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2017Boron and high-k dielectrics: Possible fourth etch stop colors for multipattern optical lithography processingcitations
- 2017Optimization of amorphous semiconductors and low- high-k dielectrics through percolation and topological constraint theorycitations
- 2015The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbidecitations
- 2014Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectricscitations
- 2011The Local Structure and I-V Characteristics of Chromium Doped Semiconducting Boron Carbidecitations
- 2006Cobalt ferrite nanoparticles: Achieving the superparamagnetic limit by chemical reductioncitations
- 2005High-Permeability Particles for Magnetic Composites
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article
The Local Structure and I-V Characteristics of Chromium Doped Semiconducting Boron Carbide
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>The local spin configuration and band structure of chromium doped boron carbide calculated by density functional theory suggests local magnetic ordering. While the long range dopant position appears random in the boron carbide semiconductor, the local position and initial empirical/computational results suggest the promise of large magneto-resistive effects. The chromium doped boron carbide thin films, fabricated by boron carbide-chromium co-deposition, were studied by current-voltage (I-V) characteristics measurements. The results provide some reason to believe that magneto-resistive effects are indeed present at room temperature.</jats:p>