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Hoffman, Nathan M.
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article
Properties of CuIn1-xGaxSe2 films prepared by the rapid thermal annealing of spray-deposited CuIn1-xGaxS2 and Se
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>Many reported CuIn<jats:sub>1-x</jats:sub>Ga<jats:sub>x</jats:sub>Se<jats:sub>2</jats:sub> (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H<jats:sub>2</jats:sub>Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn<jats:sub>1-x</jats:sub>Ga<jats:sub>x</jats:sub>Se<jats:sub>2</jats:sub> (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn<jats:sub>1-x</jats:sub>Ga<jats:sub>x</jats:sub>S<jats:sub>2</jats:sub> and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2-dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn<jats:sub>1-x</jats:sub>Ga<jats:sub>x</jats:sub>S<jats:sub>2</jats:sub> via spray deposition of a toluene-based “nanoink” suspension. The two-layer sample was annealed at 550 <jats:sup>o</jats:sup>C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn<jats:sub>1-x</jats:sub>Ga<jats:sub>x</jats:sub>S<jats:sub>2</jats:sub> nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A<jats:sub>1</jats:sub> phonon frequencies change nearly linearly between those for CuInSe<jats:sub>2</jats:sub> and CuGaSe<jats:sub>2</jats:sub>.</jats:p>