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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kaloyeros, Alain E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2012Metallization of a Genetically Engineered Polypeptidecitations
- 2007Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemescitations
- 2005Spectroellipsometric characterization of Au-Y<sub>2</sub>O<sub>3</sub>–stabilized ZrO<sub>2</sub> nanocomposite filmscitations
- 2004Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemescitations
- 2004Chemical Vapor Deposition of ZnS:Mn for Thin-Film Electroluminescent Display Applicationscitations
- 2001MOCVD ZnS:Mn Films: Crystal Structure and Defect Microstructure as a Function of the Growth Parameters
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article
Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes
Abstract
<jats:p>A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaN<jats:sub><jats:italic>x</jats:italic></jats:sub>stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe<jats:sub>3</jats:sub>) and oxygen (O<jats:sub>2</jats:sub>) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe<jats:sub>3</jats:sub>and O<jats:sub>2</jats:sub>exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.</jats:p>