• Topol, Anna W.
• Nuesca, Guillermo M.
• Barth, Karl W.
• Dovidenko, Katharine
• Taylor, Brian K.
• Tuenge, Richard T.
• Kaloyeros, Alain E.
• King, Chris N.

Abstract

<jats:p>Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process used diethylzinc (DEZ), di-π-cyclopentadienyl manganese (CPMn), and hydrogen sulfide (H<jats:sub>2</jats:sub>S) as co-reactants and hydrogen (H<jats:sub>2</jats:sub>) as carrier gas. A design of experiments approach was used to derive functionality curves for the dependence of ZnS:Mn film properties on substrate temperature and flow rates (partial pressures) of DEZ, CPMn, H<jats:sub>2</jats:sub>S, and H<jats:sub>2</jats:sub>. Film physical, chemical, structural, and optical properties were examined using Rutherford backscattering spectrometry, dynamic secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, nuclear-reaction analysis, x-ray diffraction, transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. EL measurements were carried out on ZnS:Mn-based dielectric–sulfur–dielectric stacks incorporated into alternating-current thin-film electroluminescent devices. An optimized process window was established for the formation of films with predominantly (0 0 2) orientation, grain size larger than 0.2 μm, and Mn dopant level approximately 0.5 at.%. A brightness of 407 cd/m<jats:sup>2</jats:sup> (119 fL) and efficiency of 1.6 lm/W were obtained, as measured at 40 V above threshold voltage and 60 Hz frequency.</jats:p>

Topics

• grain
• grain size
• scanning electron microscopy
• x-ray diffraction
• experiment
• thin film
• x-ray photoelectron spectroscopy
• atomic force microscopy
• zinc
• Hydrogen
• transmission electron microscopy
• Manganese
• spectrometry
• chemical vapor deposition
• Rutherford backscattering spectrometry