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| Azevedo, Nuno Monteiro |
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Eisenbraun, Eric T.
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article
Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes
Abstract
<jats:p>A metal–organic thermal atomic layer deposition (ALD) approach was developed for the growth of ultrathin tantalum nitride (TaN<jats:italic><jats:sub>x</jats:sub></jats:italic>) films by alternate pulses of <jats:italic>tert</jats:italic>-butylimido trisdiethylamido tantalum (TBTDET) and ammonia (NH<jats:sub>3</jats:sub>). An optimized ALD process window was established by investigating saturation of film-growth rate versus TBTDET and NH<jats:sub>3</jats:sub> exposures, as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (250 °C) ALD process yielded uniform, continuous, and conformal TaN<jats:italic><jats:sub>x</jats:sub></jats:italic> films with a Ta:N ratio of 1:1. Carbon and oxygen impurity levels were in the 5–8 at.% range. Associated film conformality in 100-nm trench structures with 11:1 aspect ratio was nearly 100%.</jats:p>