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Aaltonen, Titta
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article
Atomic layer deposition of noble metals
Abstract
The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al<sub>2</sub>O<sub>3</sub>. Platinum thin films were obtained by ALD from MeCpPtMe<sub>3</sub> and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of 300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al<sub>2</sub>O<sub>3</sub> layer. On iridium surface, ruthenium films were obtained from RuCp<sub>2</sub> and oxygen at 225 °C and from Ru(thd)<sub>3</sub> and oxygen at 250 °C, whereas no films were obtained on Al<sub>2</sub>O<sub>3</sub> at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.