| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kaiser, U.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2020Tailoring the Charge/Discharge Potentials and Electrochemical Performance of SnO₂ Lithium‐Ion Anodes by Transition Metal Co‐Doping
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2017Formation of nickel clusters wrapped in carbon cages: towards new endohedral metallofullerene synthesiscitations
- 2015Single step tranformation of sulphur to Li₂S₂/Li₂S in Li-S batteries
- 2012Strain and defects in Si-doped (Al)GaN epitaxial layerscitations
- 2010Identification of magnetic properties of few nm sized FePt crystalline particles by characterizing the intrinsic atom order using aberration corrected S/TEMcitations
- 2010Origin of valence and core excitations in LiFePO4 and FePO4citations
- 2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study ; Sauerstoff induzierte Verspannungshomogenisierung in AlN Nukleationsschichten und deren Einfluss auf MOVPE GaN Schichten auf Saphir: Eine Röntgendiffraktometrie-Studiecitations
- 2008Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facetscitations
- 2007Study of a novel ALD process for depositing MgF2 thin filmscitations
- 2002Transmission electron microscopy study of Ge implanted into SiCcitations
- 2002Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealingcitations
Places of action
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article
Transmission electron microscopy study of Ge implanted into SiC
Abstract
<jats:p>Hexagonal 6H– and 4H–SiC wafers were implanted with (1−1.5) × 10<jats:sup>16</jats:sup> cm<jats:sup>−2</jats:sup> germanium ions at room temperature and at 700 °C with subsequent annealing between 1000 and 1600 °C. Structural changes in the SiC matrix were studied in detail by means of transmission electron microscopy (TEM). After implantation at room temperature the hexagonal SiC matrix becomes amorphous and, after annealing, recrystallizes into cubic SiC. The latter process was accompanied by the creation of voids and cracks. In case of high-temperature (700 °C) implantation, where amorphization was avoided, no polytype change in as-implanted and annealed SiC wafers was observed. In annealed samples nanocrystalline precipitates with high Ge content were observed in high-resolution TEM images.</jats:p>