| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gorelik, Tatiana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Orientational disorder of monomethyl-quinacridone investigated by Rietveld refinement, structure refinement to the pair distribution function and lattice-energy minimizationscitations
- 20193D Electron Diffraction: The Nanocrystallography Revolutioncitations
- 2019Towards quantitative treatment of electron pair distribution functioncitations
- 2015Structural insights into<i>M</i><sub>2</sub>O–Al<sub>2</sub>O<sub>3</sub>–WO<sub>3</sub>(<i>M</i>= Na, K) system by electron diffraction tomographycitations
- 2015Crystalline Non‐Equilibrium Phase of a Cobalt(II) Complex with Tridentate Ligandscitations
- 2009Electron diffraction, X-ray powder diffraction and pair-distribution-function analyses to determine the crystal structures of Pigment Yellow 213, C<sub>23</sub>H<sub>21</sub>N<sub>5</sub>O<sub>9</sub>citations
- 2002Transmission electron microscopy study of Ge implanted into SiCcitations
- 2002Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealingcitations
Places of action
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article
Transmission electron microscopy study of Ge implanted into SiC
Abstract
<jats:p>Hexagonal 6H– and 4H–SiC wafers were implanted with (1−1.5) × 10<jats:sup>16</jats:sup> cm<jats:sup>−2</jats:sup> germanium ions at room temperature and at 700 °C with subsequent annealing between 1000 and 1600 °C. Structural changes in the SiC matrix were studied in detail by means of transmission electron microscopy (TEM). After implantation at room temperature the hexagonal SiC matrix becomes amorphous and, after annealing, recrystallizes into cubic SiC. The latter process was accompanied by the creation of voids and cracks. In case of high-temperature (700 °C) implantation, where amorphization was avoided, no polytype change in as-implanted and annealed SiC wafers was observed. In annealed samples nanocrystalline precipitates with high Ge content were observed in high-resolution TEM images.</jats:p>