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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Harwell, Jonathon
University of St Andrews
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article
An investigation of the energy levels within a common perovskite solar cell device and a comparison of DC/AC surface photovoltage spectroscopy Kelvin Probe measurements of different MAPBI3 perovskite solar cell device structures
Abstract
<p>We present a study of the energy levels in a FTO/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>/Spiro solar cell device. The measurements are performed using a novel ambient pressure photoemission (APS) technique alongside Contact Potential Difference data from a Kelvin Probe. The Perovskite Solar Cell energy band diagram is demonstrated for the device in dark conditions and under illumination from a 150W Quartz Tungsten Halogen lamp. This approach provides useful information on the interaction between the different materials in this solar cell device. Additionally, non-destructive macroscopic DC and AC Surface Photovoltage Spectroscopy (SPS) studies are demonstrated of different MAPBI<sub>3</sub> device structures to give an indication of overall device performance. AC-SPS measurements, previously used on traditional semiconductors to study the mobility, are used in this case to characterise the ability of a perovskite solar cell device to respond rapidly to chopped light. Two different device structures studied showed very different characteristics: Sample A (without TiO<sub>2</sub>): (ITO/PEDOT:PSS/polyTPD/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>/PCBM) had ∼4 times the magnitude of AC-SPS response compared to Sample B (including TiO<sub>2</sub>): (ITO/TiO<sub>2</sub>/ CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>/Spiro). This demonstrates that the carrier speed characteristics of device architecture A is superior to device architecture B. The TiO<sub>2</sub> layer has been associated with carrier trapping which is illustrated in this example. However, the DC-SPV performance of sample B is ∼5 times greater than that of sample A. The band gap of the MAPBI3 layer was determined through DC-SPS (1.57 ± 0.07 eV), Voc of the devices measured and qualitative observations made of interface trapping by DC light pulsing. The combination of these (APS, KP, AC/DC-SPV/SPS) techniques offers a more general method for measuring the energy level alignments and performance of Organic and Hybrid Solar Cell Devices.</p>