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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Lamperti, Alessio
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Publications (4/4 displayed)
- 2022Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowirescitations
- 2022Control of magnetoelastic coupling in Ni/Fe multilayers using He+ ion irradiationcitations
- 2019High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growthcitations
- 2017Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Propertiescitations
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article
Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties
Abstract
<jats:title>ABSTRACT</jats:title><jats:p>Cerium dioxide (CeO<jats:sub>2</jats:sub>) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO<jats:sub>2</jats:sub> cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO<jats:sub>2</jats:sub>/Si or <111> for CeO<jats:sub>2</jats:sub>/TiN. In correspondence, we measure a relative concentration of Ce<jats:sup>3+</jats:sup> equals to 22.0% in CeO<jats:sub>2</jats:sub>/Si and around 18% in CeO<jats:sub>2</jats:sub>/TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results underline the films differences and similarities between ALD-deposited CeO<jats:sub>2</jats:sub> either on Si or TiN substrates, thus extending the knowledge on the CeO<jats:sub>2</jats:sub> structural and chemical properties.</jats:p>