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Isa, Fabio
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Topics
Publications (11/11 displayed)
- 2022Conductive n-type gallium nitride thin films prepared by sputter depositioncitations
- 2020Advanced RuO2 Thin Films for pH Sensing Applicationcitations
- 2017Strain Engineering in Highly Mismatched SiGe/Si Heterostructurescitations
- 2017Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substratescitations
- 2017Strain engineering in highly mismatched SiGe/Si heterostructurescitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystalscitations
- 2016Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystalscitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
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article
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals
Abstract
<p>We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.</p>