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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Müller, Stefan
University of Würzburg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2023A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thicknesscitations
- 2022Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayercitations
- 2022Short‐term heat treatment of the high‐alloy cold‐work tool steel X153CrMoV12 citations
- 2021Heterogeneous Adsorption and Local Ordering of Formate on a Magnetite Surfacecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2018Adsorption of acetone on rutile TiO2: a DFT and FTIRS study
- 2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etchingcitations
- 2017The crystal structures of carbonyl iron powder – revised using in situ synchrotron XRPDcitations
- 2014Stable Silenolates and Brook-Type Silenes with Exocyclic Structurescitations
- 2014Impact of strain on electronic defects in (Mg,Zn)O thin films
- 2013Bismuth sulphide–polymer nanocomposites from a highly soluble bismuth xanthate precursorcitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2009Energy barriers and hysteresis in martensitic phase transformationscitations
- 2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC ; Röntgentopographie an (Al,Ga)N/GaN basierenden elektronischen Bauelementstrukturen auf SiCcitations
- 2000Analysis of peculiar structural defects created in GaAs by diffusion of copper ; Analyse von eigentümlichen Strukturdefekten, die durch Kupferdiffusion in GaAs erzeugt werdencitations
Places of action
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article
The crystal structures of carbonyl iron powder – revised using in situ synchrotron XRPD
Abstract
Although carbonyl iron powder (CIP) is an old material for magnetic applications (e.g. inductor cores), the structure of this material is still described controversially in literature. On the first glance a greyish powder exhibiting a spherical structure, CIP reveals on the second glance a nanoscopic crystalline sub-structure. The material itself contains carbon and nitrogen and its structure is described as an onion-type structure. However, the nature of the different shells and clarity on the nature of the involved carbidic and/or nitridic phases, be they crystalline, amorphous or solid solutions has not yet been achieved. In addition, it is known, that CIP transforms in H2-atmosphere to a “soft” grade, consisting of pure Fe. Again, chemical and microstructural knowledge on the transition from the “hard” to the “soft” CIP is lacking. This leads to the motivation of this study: 1. Unambiguously identify the nature and existence of the involved phases in the unreduced and hard carbonyl iron powder and in the reduced and soft iron powder particles 2. Characterize the phase transformations and microstructural changes of CIP during the thermic treatment in a hydrogen atmosphere. Different techniques were used to clarify the above mentioned points like in-situ synchrotron XRPD accompanied by electron microscopy techniques.