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Fischer, Reinhard X.
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article
Synthesis and characterization of mullite-type (Al1-xGax)4B2O9
Abstract
<jats:title>Abstract</jats:title><jats:p>Mullite-type (Al<jats:sub>1-x</jats:sub>Ga<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> compounds were synthesized using the glycerine method. The end members Al<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> and Ga<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> were produced at different temperatures. Starting from the Al<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> composition the incorporation limit of Ga ranges between 60 and 70 mol-%, while starting from Ga<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> the Al incorporation limit is 70 mol-% in the Ga<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> structure. The crystal structures were refined from the X-ray powder diffraction data and analyzed by the Rietveld method. The positions of B atoms were determined by distance least squares modeling. The temperature-dependent investigations demonstrate that the stability of a given member is a function of Al/Ga ratio in the structure. The incorporation of Ga in the Al<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> structures leads to a successive decrease of the decomposition temperatures. Pure Al<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> decomposes above 1323 K, whereas pure Ga<jats:sub>4</jats:sub>B<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> is stable up to 1073 K.The thermal expansions of the lattice parameters were fit using extended Grüneisen first-order approximation for the zero-pressure equation of state. Changes of the internal energy of the crystal were calculated by the Debye-Einstein-Anharmonicity model. The thermal stability of each member has been explained in terms of the obtained Debye temperature.</jats:p>