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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Parala, Harish
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Molecular approach to semiconductors: a shift towards ecofriendly manufacturing and neuroinspired interfacescitations
- 2014Tailoring iron(III) oxide nanomorphology by chemical vapor deposition: growth and characterizationcitations
- 2014Indium-tris-guanidinates : a promising class of precursors for water assisted atomic layer deposition of In2O3 thin films
- 2014Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
- 2012Influence of process parameters on the crystallinity, morphology and composition of tungsten oxide-based thin films grown by metalorganic chemical vapor depositioncitations
- 2012Influence of process parameters on the crystallinity, morphology and composition of tungsten oxide-based thin films grown by metalorganic chemical vapor deposition
- 2012Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition
- 2010Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition
- 2009Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors
- 2009Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.citations
- 2008Organometallic access to intermetallic θ-CuE2 (E = Al, Ga) and Cu1-xAlx phases
- 2006New Tungsten(VI) Guanidinato complexes : synthesis, characterization, and application in metal-organic chemical vapor deposition of Tungsten nitride thin films
- 2001Nanosized GaN particles by chemical vapor infiltration
- 2001Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors
Places of action
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article
Molecular approach to semiconductors: a shift towards ecofriendly manufacturing and neuroinspired interfaces
Abstract
<jats:title>Abstract</jats:title><jats:p>Energy dissipation through physical downscaling towards more complex types of memory and logic devices, loss of ultrapure water and consumption of large amounts of (toxic) chemicals for wafer cleaning processes, as well as high thermal budget of solid-state synthesis and thin film growth of standard semiconductors including the use of rare earth elements – all this poses great challenges for semiconductor materials science and technology. Therefore, research and development of alternative methods for micro- and nanofabrication and chemical functionalization of a new type of resource- and energy-efficient semiconductors as the core component of every computer chip is crucial. One of the promising opportunities is the transformation of today’s complementary metal-oxide-semiconductor (CMOS) electronics into ecofriendly and neuroinspired electronics driven by molecular design and multi-level switching mechanisms at room temperature. The sustainable chemical technology of electron transport and switching materials in semiconductor manufacturing and the development of devices with new unconventional nanophysics, improved performance, and augmented functionalities (beyond-CMOS and More-than-Moore) is becoming increasingly important in the context of a gradual transition to a future-oriented concept of Internet of Everything (IoE). In this article, we focus on the technological significance of semiconductor preparation from single-source (molecular) precursors and the prospect of functionalizing semiconductors using DNA origami nanotechnology and stimuli-responsive metal–oxygen cluster ions such as polyoxometalates (POMs). We also describe the advanced characterization of these qualified molecular systems by soft X-rays. We emphasize the technical relevance of using solution-based methods for the bottom-up preparation of novel and hybrid semiconductors as well as their challenging scalability and the compatibility of methods of molecular technology with lithography-based mass production. Our article aims to contribute to the achievement of the United Nations’ Sustainable Development Goal 9 (Industry, Innovation and Infrastructure).</jats:p>