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Corley-Wiciak, Cedric
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdiskscitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023High Crystallinity Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Depositioncitations
- 2023The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdiskscitations
- 2023Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication
- 2022Lateral Selective SiGe Growth for Dislocation-Free Virtual Substrate Fabricationcitations
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article
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
Abstract
<jats:title>Abstract</jats:title><jats:p>A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics applications leveraging on this property, we use the technologically relevant SiGe material system to design, grow, and characterize n-type doped parabolic quantum wells realized by continuously grading Ge-rich Si<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Ge<jats:sub><jats:italic>x</jats:italic></jats:sub> alloys, deposited on silicon wafers. An extensive structural analysis highlights the capability of the ultra-high-vacuum chemical vapor deposition technique here used to precisely control the quadratic confining potential and the target doping profile. The absorption spectrum, measured by means of Fourier transform infrared spectroscopy, revealed a single peak with a full width at half maximum at low and room temperature of about 2 and 5 meV, respectively, associated to degenerate intersubband transitions. The energy of the absorption resonance scales with the inverse of the well width, covering the 2.5–5 THz spectral range, and is almost independent of temperature and doping, as predicted for a parabolic confining potential. On the basis of these results, we discuss the perspective observation of THz strong light–matter coupling in this silicon compatible material system, leveraging on intersubband transitions embedded in all-semiconductor microcavities.</jats:p>