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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Salman, Jad
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article
Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
Abstract
<jats:title>Abstract</jats:title><jats:p>We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide (ZnO) and vanadium dioxide (VO<jats:sub>2</jats:sub>) as representatives, using a commercial focused ion beam (FIB) system. Using a Ga<jats:sup>+</jats:sup> FIB and thermal annealing, we demonstrated variable doping of a wide-bandgap semiconductor, ZnO, achieving carrier concentrations from 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup> to 10<jats:sup>20</jats:sup> cm<jats:sup>−3</jats:sup>. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, VO<jats:sub>2</jats:sub>, locally modifying its insulator-to-metal transition (IMT) temperature by up to ∼25 °C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.</jats:p>