| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kampfrath, Tobias
Freie Universität Berlin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2023Atomic Scale Control of Spin Current Transmission at Interfaces
- 2023Nonlinear terahertz control of the lead halide perovskite lattice
- 2023Nonlinear THz Control of the Lead Halide Perovskite Lattice
- 2023Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin–phonon interactions
- 2023Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin–phonon interactionscitations
- 2022Spin-voltage-driven efficient terahertz spin currents from the magnetic Weyl semimetals Co2MnGa and Co2MnAl
- 2022Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn
- 2022Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMncitations
- 2022Laser-induced terahertz spin transport in magnetic nanostructures arises from the same force as ultrafast demagnetization
- 2022Atomic scale control of spin current transmission at interfaces
- 2022Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transport
- 2022Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transportcitations
- 2022Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductorscitations
- 2021Frequency-independent terahertz anomalous Hall effect in DyCo5, Co32Fe68 and Gd27Fe73 thin films from DC to 40 THz
- 2021Frequency-Independent Terahertz Anomalous Hall Effect in DyCo5, Co32Fe68, and Gd27Fe73 Thin Films from DC to 40 THzcitations
- 2021Broadband Terahertz Probes of Anisotropic Magnetoresistance Disentangle Extrinsic and Intrinsic Contributions
- 2021Frequency‐Independent Terahertz Anomalous Hall Effect in DyCo 5, Co 32Fe68, and Gd 27Fe73 Thin Films from DC to 40 THzcitations
- 2021Ultrafast photocurrents in MoSe2 probed by terahertz spectroscopy
- 2021Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributionscitations
- 2020High-Throughput Techniques for Measuring the Spin Hall Effect
- 2020Phase-Resolved Detection of Ultrabroadband THz Pulses inside a Scanning Tunneling Microscope Junction
- 2018Terahertz spectroscopy for all-optical spintronic characterization of the spin-Hall-effect metals Pt, W and Cu80Ir20
- 2018Complex terahertz and direct current inverse spin Hall effect in YIG/Cu1-xIrx bilayers across a wide concentration range
- 2017Terahertz spin currents and inverse spin Hall effect in thin-film heterostructures containing complex magnetic compoundscitations
- 2017Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm−1 from a metallic spintronic emitter
Places of action
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article
Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors
Abstract
<jats:title>Abstract</jats:title><jats:p>Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.</jats:p>