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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kannan, R.
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Publications (6/6 displayed)
- 2023Operando neutron diffraction reveals mechanisms for controlled strain evolution in 3D printingcitations
- 2018Effect of Modified Nanoclay Composite on Blended PVDF/PEG Electrolyte Membranes for Fuel Cell Applicationscitations
- 2017Role of structural modifications of montmorillonite, electrical properties effect, physical behavior of nanocomposite proton conducting membranes for direct methanol fuel cell applicationscitations
- 2017Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported dischargecitations
- 2016Facile synthesis and characterization of a reduced graphene oxide/halloysite nanotubes/hexagonal boron nitride (RGO/HNT/h-BN) hybrid nanocomposite and its potential application in hydrogen storagecitations
- 2014Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (<font>ZrN</font>) Films Deposited by Mid Frequency Reactive Magnetron Sputteringcitations
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article
Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge
Abstract
<jats:title>Abstract</jats:title><jats:p>The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).</jats:p>