| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Corre, Alain Le
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2009Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
Places of action
| Organizations | Location | People |
|---|
article
Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics
Abstract
GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This alloy displays efficient photoluminescence at room temperature and good light absorption. An early-stage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I–V curve show that carriers have been extracted from the GaAsPN alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.