| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gélard, Isabelle
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Dimensionality effect on surface states and piezoelectric behavior in ZnO nanowires grown by pulsed-liquid injection metal–organic chemical vapor depositioncitations
- 2024Sustainable Composite Materials: High Dielectric Performance of Recycled Polylactic Acid/La1.5Sr0.5NiO4 for Future Energy Storage Systems
- 2023Aptamer conjugated Si nanowire network/poly(pyrrole)-NTA structure for electrochemical sensingcitations
- 2022Tunable dimensions of ZnO nanowires grown by metal-organic chemical vapor deposition and its impact on the piezoelectric properties
- 2020Elementary processes governing V2AlC chemical etching in HFcitations
- 2010Oxides heterostructures for nanoelectronicscitations
Places of action
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article
Oxides heterostructures for nanoelectronics
Abstract
We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO(3) on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si Surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La(0.7)Sr(0.3)MnO(3) and La(0.8)MnO(3-delta) as well as multiferroic hexagonal ReMnO(3) manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 degrees C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO(3) on Si is considered. Issues and control of the SrTiO(3)/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO(3) on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO(3) or La(0.7)Sr(0.3)MnO(3). La(0.7)Sr(0.3)MnO(3), films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si waters opens Lip the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds Such as InP on Si using epitaxial SrTiO(3) buffer layers for the future integration of optics on Si.