| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Saint-Girons, Guillaume
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Integration of epitaxial LiNbO3 thin films with silicon technologycitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2023Strain generated by the stacking faults in epitaxial SrO(SrTiO 3 ) N Ruddlesden–Popper structures
- 2021Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO 3 Transparent Thin Filmscitations
- 2021Spectroscopic ellipsometry: a sensitive tool to monitor domains formation during the bias enhanced nucleation of heteroepitaxial diamondcitations
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2019Perovskite-oxide based hyperbolic metamaterialscitations
- 2019Poisson ratio and bulk lattice constant of (Sr 0.25 La 0.75 )CrO 3 from strained epitaxial thin filmscitations
- 2019Enhanced ferroelectricity in epitaxial Hf 0.5 Zr 0.5 O 2 thin films integrated with Si(001) using SrTiO 3 templatescitations
- 2016Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategycitations
- 2016Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms
- 2015Capping and decapping GaAs nanowires with As for preventing oxidation and for epitaxial shell growth
- 2014Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxycitations
- 2013LaAlO 3 /Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical propertiescitations
- 2010Oxides heterostructures for nanoelectronicscitations
- 2004Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networkscitations
Places of action
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article
Oxides heterostructures for nanoelectronics
Abstract
We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO(3) on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si Surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La(0.7)Sr(0.3)MnO(3) and La(0.8)MnO(3-delta) as well as multiferroic hexagonal ReMnO(3) manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 degrees C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO(3) on Si is considered. Issues and control of the SrTiO(3)/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO(3) on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO(3) or La(0.7)Sr(0.3)MnO(3). La(0.7)Sr(0.3)MnO(3), films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si waters opens Lip the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds Such as InP on Si using epitaxial SrTiO(3) buffer layers for the future integration of optics on Si.