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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lafleur, Gael
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2019Controlled Oxidation of III-V Semiconductors for Photonic Devices
- 2018Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameterscitations
- 2018Modelling anisotropic lateral oxidation from circular mesascitations
- 2018Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonatorscitations
- 2017Anisotropic oxidation of circular mesas for complex confinement in photonic devices: Experiments and modelling
- 2016III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
- 2015Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technologycitations
- 2015AlOx/AlGaAs technology for multi-plane integrated photonic devices
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article
Modelling anisotropic lateral oxidation from circular mesas
Abstract
In this paper, an iterative method to model the anisotropic lateral oxidation of circular structures is proposed and validated by confrontation to experimental data. The described model enables the efficient calculation of the temporal bi-dimensional evolution of the oxidation front shape, starting from a circular mesa, and progressing inward as a result of an anisotropic process combining an isotropic diffusion with an anisotropic reaction. The result of the developed model shows that the oxide aperture smoothly deforms from a circle to become more diamond-like, mimicking the experimental situation encountered when fabricating vertical-cavity surface-emitting lasers (VCSELs) on (100) wafers or, more generally, when oxidizing circular mesas of aluminum-containing III-V semiconductor on similarly oriented substrates.