| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ronning, Carsten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Selective Generation of Luminescent Defects in Hexagonal Boron Nitridecitations
- 2023High‐Temperature Laser‐Assisted Synthesis of Boron Nanorods, Nanowires, and Bamboo‐Like Nanotubescitations
- 2023Early oxidation stages of austenitic stainless steel monitored using Mn as tracercitations
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2022Tuning carrier density and phase transitions in oxide semiconductors using focused ion beamscitations
- 2022Wide‐Bandgap Double Perovskites with Multiple Longitudinal‐Optical Phonon Scatteringcitations
- 2021Fast recovery of ion-irradiation-induced defects in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films at room temperaturecitations
- 2020Polarization Dependent Excitation and High Harmonic Generation from Intense Mid-IR Laser Pulses in ZnOcitations
- 2020Hot electrons in a nanowire hard X-ray detectorcitations
- 2019Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantationcitations
- 2018Dynamics of nanoparticle morphology under low energy ion irradiationcitations
- 2014Electron-beam-induced current at absorber back surfaces of Cu (In,Ga) Se2 thin-film solar cellscitations
- 2013Controlled synthesis of ultrathin ZnO nanowires using micellar gold nanoparticles as catalyst templatescitations
- 2001Superhard, conductive coatings for atomic force microscopy cantileverscitations
Places of action
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article
Fast recovery of ion-irradiation-induced defects in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films at room temperature
Abstract
<jats:p>Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here, we demonstrate how ion irradiation can be used to tailor disorder in initially crystalline Ge<jats:sub>2</jats:sub>Sb<jats:sub>2</jats:sub>Te<jats:sub>5</jats:sub> (GST) thin films via the intentional creation of lattice defects. We found that continuous Ar<jats:sup>+</jats:sup>-ion irradiation at room temperature of GST films causes complete amorphization of GST when exceeding 0.6 (for rock-salt GST) and 3 (for hexagonal GST) displacements per atom (<jats:italic>n<jats:sub>dpa</jats:sub></jats:italic>). While the transition from rock-salt to amorphous GST is caused by progressive amorphization via the accumulation of lattice defects, several transitions occur in hexagonal GST upon ion irradiation. In hexagonal GST, the creation of point defects and small defect clusters leads to the disordering of intrinsic vacancy layers (van der Waals gaps) that drives the electronic metal–insulator transition. Increasing disorder then induces a structural transition from hexagonal to rock-salt and then leads to amorphization. Furthermore, we observed different annealing behavior of defects for rock-salt and hexagonal GST. The higher amorphization threshold in hexagonal GST compared to rock-salt GST is caused by an increased defect-annealing rate, i.e., a higher resistance against ion-beam-induced disorder. Moreover, we observed that the recovery of defects in GST is on the time scale of seconds or less at room temperature.</jats:p>