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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Baets, Roel
Ghent University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2016Low loss CMOS-compatible PECVD silicon nitride waveguides and grating couplers for blue light optogenetic applicationscitations
- 2016On-chip mid-infrared photothermal spectroscopy using suspended silicon-on-insulator microring resonatorscitations
- 2015Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitrycitations
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Long-wavelength silicon photonic integrated circuits
- 2014Mid-IR heterogeneous silicon photonicscitations
- 2013III-V/silicon photonic integrated circuits for communication and sensing applicationscitations
- 2012Near-infrared grating couplers for silicon nitride photonic wirescitations
- 2011Laser sources on a heterogeneous III-V/silicon platform
- 2009Silicon-organic hybrid (SOH): a platform for ultrafast optics
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article
Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry
Abstract
We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The crystals are created by cycling atomic layer deposition of three dielectric materials such that the resulting metamaterial is noncentrosymmetric in the direction of the deposition. Characterization of the structures by second-harmonic generation Maker-fringe measurements shows that the main component of their nonlinear susceptibility tensor is about 5xA0;pm/V, which is comparable to well-established materials and more than an order of magnitude greater than reported for a similar crystal Appl. Phys. Lett.107, 121903 (2015)APPLAB0003-695110.1063/1.4931492. Our demonstration opens new possibilities for second-order nonlinear effects on CMOS-compatible nanophotonic platforms.