| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Semenova, Elizaveta
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024InAs(P)/InP QDs as sources of single indistinguishable photons at 1.55 µm
- 2024Experimental realization of deep sub-wavelength confinement of light in a topology-optimized InP nanocavitycitations
- 2024Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bondingcitations
- 2020Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengthscitations
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2018Ultra-Efficient and Broadband Nonlinear AlGaAs-on-Insulator Chip for Low-Power Optical Signal Processingcitations
- 2017Mid-IR optical properties of silicon doped InPcitations
- 2016Highly doped InP as a low loss plasmonic material for mid-IR regioncitations
- 2016An Ultra-Efficient Nonlinear Platform: AlGaAs-On-Insulator
- 2013Ultrahigh-speed hybrid laser for silicon photonic integrated chips
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2011Towards quantitative three-dimensional characterisation of InAs quantum dots
- 2011Active III-V Semiconductor Photonic Crystal Waveguidescitations
Places of action
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article
Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Abstract
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 µm-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80 % single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1 %.