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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Yao, Yifan
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Publications (5/5 displayed)
- 2023Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodescitations
- 2021Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction controlcitations
- 2021Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratiocitations
- 2021Highly Conductive n-Al 0.65 Ga 0.35 N Grown by MOCVD Using Low V/III Ratio
- 2018Self-Suspended Nanomesh Scaffold for Ultrafast Flexible Photodetectors Based on Organic Semiconducting Crystalscitations
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article
Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control
Abstract
<jats:p>In this work, we present fully transparent metal organic chemical vapor deposition (MOCVD)-grown InGaN cascaded micro-light-emitting diodes (µLEDs) with independent junction control. The cascaded µLEDs consisted of a blue emitting diode, a tunnel junction (TJ), a green emitting diode, and a TJ, without using any conductive oxide layer. We can control the injection of carriers into blue, green, and blue/green junctions in the same device independently, which show high optical and electrical performance. The forward voltage (V<jats:sub>f</jats:sub>) at 20 A/cm<jats:sup>2</jats:sup> for the TJ blue µLEDs and TJ green µLEDs is 4.06 and 3.13 V, respectively. These results demonstrate the efficient TJs and fully activated p-type GaN in the cascaded µLEDs. Such demonstration shows the important application of TJs for the integration of µLEDs with multiple color emissions.</jats:p>