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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Müller, Ralph
Fraunhofer Institute for Solar Energy Systems
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2023Mask and plate: a scalable front metallization with low-cost potential for III–V-based tandem solar cells enabling 31.6 % conversion efficiencycitations
- 2022Integrated Solar‐Driven Device with a Front Surface Semitransparent Catalysts for Unassisted CO2 Reductioncitations
- 2020Tailored disorder: a self-organized photonic contact for light trapping in silicon-based tandem solar cellscitations
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article
Tailored disorder: a self-organized photonic contact for light trapping in silicon-based tandem solar cells
Abstract
S.10909-10918 ; We present a process development leading to efficient rear side light trapping structures with the purpose of enhancing the infrared response of a silicon-based tandem solar cell. To this end, we make use of phase separation effects of two immiscible polymers, polystyrene and poly(methyl methacrylate), resulting in a non-periodic polystyrene structure on silicon with a well-defined size distribution. Onto this pattern, we evaporate silver as a scattering rear side mirror and contact layer. Average feature sizes and periods can be tuned by varying material properties (e.g. molar weights or ratios of the polymers) as well as processing conditions during the spin coating. This way a favorable pseudo period of approx. 1 µm for these disordered structure features was realized and successfully implemented into a silicon solar cell. The structure shows a ring-shaped scattering distribution which is beneficial for light trapping in solar cells. External quantum efficiency measurements show that a gain in short circuit current density of 1.1 mA/cm2 compared to a planar reference can be achieved, which is in the same range as we achieved using nanoimprint lithography in a record triple-junction III/V on a silicon device. ; 28 ; Nr.8