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Lumeau, Julien
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Topics
Publications (12/12 displayed)
- 2024Investigation of laser-induced contamination on dielectric thin films in MHz sub-ps regime
- 2023Uniform Huygens Metasurfaces with Postfabrication Phase Pattern Recording Functionalitycitations
- 2023Temperature resistant anti-reflective coating on Si-wafer for long-wave infra-red imagingcitations
- 2022Mechanisms driving self-organization phenomena in random plasmonic metasurfaces under multipulse femtosecond laser exposure: a multitime scale studycitations
- 2022Development and applications of ultra-thin metallic films fabricated by Physical Vapor Depositioncitations
- 2022Sub-ps 1030 nm laser-induced damage threshold evaluation of pulsed-laser deposited sesquioxides and magnetron-sputtered metal oxide optical coatings
- 2022Laser Annealing of Sb2Te3 2D Layers towards Nonlinear Optical Applicationscitations
- 2021Preventing Corrosion of Aluminum Metal with Nanometer-Thick Films of Al 2 O 3 Capped with TiO 2 for Ultraviolet Plasmonicscitations
- 2020Excitation of Bloch Surface Waves in Zero-Admittance Multilayers for High-Sensitivity Sensor Applicationscitations
- 2020Giant ultrafast optical nonlinearities of annealed Sb2Te3layerscitations
- 2019Photosensitive chalcogenide metasurfaces supporting bound states in the continuumcitations
- 2018Saturable absorption optimization of silica protected thin Sb2Te3 layers towards super-resolution applicationscitations
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article
Photosensitive chalcogenide metasurfaces supporting bound states in the continuum
Abstract
<p>We study, both theoretically and experimentally, tunable metasurfaces supporting sharp Fano-resonances inspired by optical bound states in the continuum. We explore the use of arsenic trisulfide (a photosensitive chalcogenide glass) having optical properties which can be finely tuned by light absorption at the post-fabrication stage. We select the resonant wavelength of the metasurface corresponding to the energy below the arsenic trisulfide bandgap, and experimentally control the resonance spectral position via exposure to the light of energies above the bandgap.</p>