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Almuneau, Guilhem
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2025Near-infrared transparent conductive electrodes based on composite GaAs-metal deep sub-wavelength high contrast grating
- 2023Oxidation of III-V semiconductors and applications ; Oxydation des semiconducteurs III-V et applications
- 2023Two birds with one tool: using thermocompression for both metallic contact annealing and wafer bonding of GaAs solar cells ; Faire d'une pierre deux coups : utilisation de la thermocompression pour le recuit des contacts métalliques et le collage de cellules solaires en GaAs
- 2019Controlled Oxidation of III-V Semiconductors for Photonic Devices
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layercitations
- 2018Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameterscitations
- 2018Modelling anisotropic lateral oxidation from circular mesascitations
- 2018Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonatorscitations
- 2017Oxide-confined VCSELs fabricated with a simple self-aligned process flowcitations
- 2017Coupled mode analysis of micro-disk resonators with an asymmetric- index-profile coupling region
- 2017Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Laserscitations
- 2017Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells
- 2017Buried Waveguides using a Quasi-Planar Process
- 2017Anisotropic oxidation of circular mesas for complex confinement in photonic devices: Experiments and modelling
- 2016III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
- 2016Self-aligned BCB planarization method for high frequency signal injection in a VCSEL with an integrated modulatorcitations
- 2015Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technologycitations
- 2015AlOx/AlGaAs technology for multi-plane integrated photonic devices
- 2014Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structurecitations
- 2008Real-time in-situ monitoring of wet thermal oxidation for precise confinement in VCSELscitations
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article
Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm
Abstract
We investigate the impact of the growth conditions of AlGaAsSb cladding layers on the properties of interband cascade lasers (ICLs). For an optimized structure emitting at 3.3 µm, we achieve an internal quantum efficiency of 65% per stage in good agreement with conventional ICL using InAs/AlSb superlattice cladding layers, in spite of internal losses of 15 cm −1 due to higher optical losses in the n-type AlGaAsSb alloys. Finally, we report a narrow ridge ICL emitting at 3.33 µm operating in continuous wave up to 80°C that produces 1 mW/uncoated facet at 80°C, 10 mW at 40°C and more than 12 mW at 20°C.