| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tournié, Eric
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Mid-infrared laser diodes epitaxially grown on on-axis (001) siliconcitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substratescitations
- 2019Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaicscitations
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018Quantum cascade lasers grown on siliconcitations
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2013Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuitcitations
- 2004Carrier recombination processes in GaAsN: from the dilute limit to alloyingcitations
Places of action
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article
Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics
Abstract
Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.