| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Taliercio, Thierry
University of Montpellier
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Long indium-rich InGaAs nanowires by SAG-HVPE
- 2023THz time-domain spectroscopy modulated with semiconductor plasmonic perfect absorberscitations
- 2022Aluminum Bowties for Plasmonic‐Enhanced Infrared Sensingcitations
- 2022Quantum plasmonics and hyperbolic material for biosensing
- 2019Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab
- 2019Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaicscitations
- 2018Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in watercitations
- 2004Carrier recombination processes in GaAsN: from the dilute limit to alloyingcitations
Places of action
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article
Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics
Abstract
Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.