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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Capuano, Luigi
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Topics
Publications (6/6 displayed)
- 2022Fabrication of microstructures in the bulk and on the surface of sapphire by anisotropic selective wet etching of laser-affected volumescitations
- 2020Fabrication of millimeter-long structures in sapphire using femtosecond infrared laser pulses and selective etchingcitations
- 2019Laser metal deposition of vanadium-rich high speed steel: Microstructuraland high temperature wear characterizationcitations
- 2019Directed energy deposition and characterization of high-carbon high speed steelscitations
- 2018Development and characterization of multilayer laser cladded high speed steelscitations
- 2018Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etchingcitations
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article
Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching
Abstract
<p>The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of processing. In addition, a qualitative analysis of the material transformation after irradiation is provided as well as an analysis of cracking phenomena. Finally, a calculated laser intensity profile inside sapphire, using the Point Spread Function (PSF), is compared to the shape of the modifications. This comparison is employed to calculate the intensity threshold leading to amorphization, which equals 2.5.1014 ± 0.4.1014 W/cm2.</p>